Laser oxidation and wide-band photoluminescence of thermal evaporated bismuth thin films

Bismuth (Bi) thin films of various microstructures were synthesized by thermal evaporation at varying substrate temperatures. The substrate temperature strongly affects the surface morphology and crystalline orientation of the Bi thin films. Peak shift and broadening of the Raman bands (E-g and A(1g) modes) observed with an increase in substrate temperature can be attributed to the phonon confinement and compressive stress effects. The Bi thin film depicts a laser-induced oxidation and phase transition as a function of varying laser power. Photoluminescence spectra show visible-near infrared broadband emission for polycrystalline Bi thin film prepared at high substrate temperature. This result indicates that polycrystalline Bi thin film can be a promising candidate for broadband optical fibre amplifiers and tunable lasers.