期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 42, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/42/2/025301
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资金
- National Science Foundation through NIRT [ECS 0404137]
- GMS University of South Florida [GFMMD00]
Nitrogen-doped nanocrystalline diamond (N-NCD) films were grown using microwave plasma enhanced chemical vapour deposition method. Films were characterized by Raman spectroscopy, x-ray diffraction and scanning electron microscopy. Perfectly ohmic contacts for the N-doped NCD film and p-type Si substrate were obtained using silver (Ag). Silver deposited at a temperature of 250 degrees C with the pulsed laser deposition method was found to show ohmic behaviour with a high degree of reproducibility. Current-voltage (I-V) characteristics are presented for various Ag/N-NCD and Ag-Si. Rectifying I-V behaviour for the interface N-NCD/p-Si suggests that the majority carriers for N-NCD are electrons.
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