4.2 Article

Optical quantum memory for polarization qubits with V-type three-level atoms

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IOP PUBLISHING LTD
DOI: 10.1088/0953-4075/44/19/195504

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  1. Spanish Ministry of Science and Innovation [FIS2008-02425, HI2008-0238, CSD2006-00019]
  2. Catalan government [SGR2009-00347]
  3. ICREA Funding Source: Custom

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We investigate an optical quantum memory scheme with V-type three-level atoms based on the controlled reversible inhomogeneous broadening technique. We theoretically show the possibility of storing and retrieving a weak light pulse interacting with the two optical transitions of the system. This scheme implements a quantum memory for a polarization qubit-a single photon in an arbitrary polarization state-without the need of two spatially separated two-level media, thus offering the advantage of experimental compactness overcoming the limitations due to mismatching and unequal efficiencies that can arise in spatially separated memories. The effects of a relative phase change between the atomic levels, as well as of phase noise due to, for example, the presence of spurious electric and magnetic fields are analysed.

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