期刊
PHYSICAL REVIEW LETTERS
卷 114, 期 13, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.114.137401
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资金
- EPSRC (UK) [EP/J007544/1]
- Deutsche Forschungsgemeinschaft [AX 17/7-1]
- EPSRC [EP/J007544/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [1294573, EP/J007544/1] Funding Source: researchfish
We demonstrate a new method to realize the population inversion of a single InGaAs/GaAs quantum dot excited by a laser pulse tuned within the neutral exciton phonon sideband. In contrast to the conventional method of inverting a two-level system by performing coherent Rabi oscillation, the inversion is achieved by rapid thermalization of the optically dressed states via incoherent phonon-assisted relaxation. A maximum exciton population of 0.67 +/- 0.06 is measured for a laser tuned 0.83 meV to higher energy. Furthermore, the phonon sideband is mapped using a two-color pump-probe technique, with its spectral form and magnitude in very good agreement with the result of path-integral calculations.
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