4.5 Article

Growth of germanium nanowires from bis(acetylacetonato) dichloro germanium

期刊

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2012.07.016

关键词

Nanostructures; Semiconductors; Vapor deposition; Raman spectroscopy; Electron Microscopy

资金

  1. National Science Foundation [ECCS-0845 501]
  2. NSF-MRI [DMR-0922997]
  3. Div Of Electrical, Commun & Cyber Sys
  4. Directorate For Engineering [0845501] Funding Source: National Science Foundation

向作者/读者索取更多资源

Germanium nanowires were grown by chemical vapor deposition from a bis(acetylacetonato) dichloro germanium precursor. The advantages of this precursor are that it is a solid and sublimes at a relatively low temperature to produce pure germanium nanowires. The nanowires were grown on different substrates such as silicon and quartz and their diameters vary from 20 to 200 nm. X-ray diffraction, Raman and transmission electron microscopy analyses show that the nanowires are crystalline and exhibit germanium crystal structure. (C) 2012 Elsevier Ltd. All rights reserved.

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