期刊
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
卷 73, 期 6, 页码 793-796出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2012.01.027
关键词
Oxides; Semiconductors; Dielectric properties; Electrical properties
资金
- National Science Council (NSC) of China [NSC-97-2221-E-182-050-MY3]
In this study, we proposed the Al/Al2O3/SmAlO3/SiO2/Si flash memory devices using high-k SmAlO3 film as a charge trapping layer and high-k Al2O3 film as a blocking layer. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopic and atomic force microscopy. The SmAlO3 flash memory devices annealed at 800 degrees C showed excellent electrical properties, such as a large memory window of similar to 2.61 V (measured at a sweep voltage range of +/- 5 V) and a small charge loss of similar to 7.1% (measured time up to 10(4) s). In addition, the charge trap centroid and charge trap density were extracted by constant current stress method. (C) 2012 Elsevier Ltd. All rights reserved.
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