期刊
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
卷 69, 期 2-3, 页码 535-539出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2007.07.040
关键词
semiconductors; thin films; electrical properties
TiO2-doped zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron sputtering in argon gas. The electrical and optical properties in the TiO2-doped ZnO films as functions of the TiO2 content were investigated. It was observed that the (002) preferred orientation had a significant value of 34-35 degrees for a Ti content of 0.71, 1.38, and 1.97 at%. When the Ti content of the TiO2-doped ZnO films was above 2.81 at%, the films became amorphous. The 1.38 at% TiO2-doped ZnO films had the lowest resistivity: 9.02 x 10(-3) Omega cm. All of the TiO2-doped ZnO films had 85% transmittance in the visible wavelength range. The optical energy band gap increased from 3.33 eV for 0.71 at% Ti to 3.43 eV for 3.43 at% Ti. (c) 2007 Elsevier Ltd. All rights reserved.
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