期刊
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
卷 69, 期 2-3, 页码 497-500出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2007.07.032
关键词
defects
The defect characteristics of ZnO layers grown on thin MgxZn1-xO buffer layers with two different crystal structures Of Cubic and wurtzite are investigated by transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTFM) and high-resolution X-ray diffraction (HRXRD). It was found that the screw dislocation density of ZnO layers grown on MgZnO-wurtzite buffer layer are lower than ZnO layers grown on MgZnO-cubic buffer layers, while the edge dislocation density in ZnO layers grown on MgZnO-wurtzite buffer layer are slightly higher than for ZnO layers grown on MgZnO-cubic buffer layers. Dislocation loop and stacking fault were observed in ZnO/MgZnO-cubic layers. (c) 2007 Elsevier Ltd. All rights reserved.
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