4.8 Article

Precise Quantization of the Anomalous Hall Effect near Zero Magnetic Field

期刊

PHYSICAL REVIEW LETTERS
卷 114, 期 18, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.114.187201

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资金

  1. U.S. Department of Energy, Office of Science, Basic Energy Sciences [19-7503]
  2. DARPA MESO [N66001-12-1-4034, N66001-11-1-4105]
  3. Gordon and Betty Moore Foundation [GBMF3429]
  4. Benchmark Stanford Graduate Fellowship
  5. DOE Office of Science Graduate Fellowship
  6. Qualcomm Innovation Fellowship

向作者/读者索取更多资源

We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in the Hall resistance to within a part per 10 000 and a longitudinal resistivity under 1 Omega per square, with chiral edge transport explicitly confirmed by nonlocal measurements. Deviations from this behavior are found to be caused by thermally activated carriers, as indicated by an Arrhenius law temperature dependence. Using the deviations as a thermometer, we demonstrate an unexpected magnetocaloric effect and use it to reach near-perfect quantization by cooling the sample below the dilution refrigerator base temperature in a process approximating adiabatic demagnetization refrigeration.

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