4.8 Article

Low Speed Crack Propagation via Kink Formation and Advance on the Silicon (110) Cleavage Plane

期刊

PHYSICAL REVIEW LETTERS
卷 115, 期 13, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.115.135501

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资金

  1. EPSRC HEmS Grant [EP/L014742/1]
  2. Rio Tinto Centre for Advanced Mineral Recovery based at Imperial College, London
  3. EPSRC [EP/L027682/1]
  4. DFG [Pa 2023/2]
  5. European Commission ADGLASS FP7 project
  6. Office of Science of the U.S. Department of Energy [DE-AC02-06CH11357]
  7. EPSRC [EP/K014560/1, EP/L027682/1, EP/L014742/1] Funding Source: UKRI
  8. Engineering and Physical Sciences Research Council [EP/L027682/1, EP/K014560/1, EP/L014742/1] Funding Source: researchfish

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We present density functional theory based atomistic calculations predicting that slow fracturing of silicon is possible at any chosen crack propagation speed under suitable temperature and load conditions. We also present experiments demonstrating fracture propagation on the Si(110) cleavage plane in the similar to 100 m/s speed range, consistent with our predictions. These results suggest that many other brittle crystals could be broken arbitrarily slowly in controlled experiments.

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