期刊
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 5, 期 23, 页码 4073-4077出版社
AMER CHEMICAL SOC
DOI: 10.1021/jz502006z
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资金
- National Basic Research Program of China [2012CB933101]
- National Science Foundation [51372107, 11104122, 51202099]
- National Science Foundation for Fostering Talents in Basic Research of the National Natural Science Foundation of China
An ideal semiconducting material should simultaneously hold a considerable direct band gap and a high carrier mobility. A 2D planar compound consisting of zigzag chains of C-C and B-N atoms, denoted as BC2N, would be a good candidate. It has a direct band gap of 2 eV, which can be further tuned by changing the layer number. At the same time, our first-principles calculations show that few-layer BC2N possesses a high carrier mobility. The carrier mobility of around one million sqaure centimeters per volt-second is obtained at its three-layer. As our study demonstrated, few-layer BC2N has potential applications in nanoelectronics and optoelectronics.
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