期刊
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 4, 期 15, 页码 2508-2513出版社
AMER CHEMICAL SOC
DOI: 10.1021/jz401199x
关键词
-
类别
资金
- Materials Research Science and Engineering Center (MRSEC) of Northwestern University [NSF DMR-1121262]
- NSF-NSEC
- NSF-MRSEC
- Keck Foundation
- State of Illinois
- Division Of Materials Research [1121262] Funding Source: National Science Foundation
The mechanisms underlying the intrinsic photoresponse of few-layer (FL) molybdenum disulfide (MoS2) field-effect transistors are investigated via scanning photocurrent microscopy. We attribute the locally enhanced photocurrent to band-bending-assisted separation of photoexcited carriers at the MoS2/Au interface. The wavelength-dependent photocurrents of FL MoS2 transistors qualitatively follow the optical absorption spectra of MoS2, providing direct evidence of interband photoexcitation. Time and spectrally resolved photocurrent measurements at varying external electric fields and carrier concentrations establish that drift-diffusion currents dominate photothermoelectric currents in devices under bias.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据