4.8 Article

CuInSe2 Quantum Dot Solar Cells with High Open-Circuit Voltage

期刊

JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 4, 期 12, 页码 2030-2034

出版社

AMER CHEMICAL SOC
DOI: 10.1021/jz4010015

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资金

  1. Robert A. Welch Foundation [F-1464]
  2. National Science Foundation Industry/University Cooperative Research Center on Next Generation Photovoltaics [IIP-1134849]
  3. National Science Foundation Graduate Research Fellowship [DGE-1110007]
  4. Division Of Computer and Network Systems
  5. Direct For Computer & Info Scie & Enginr [1134849] Funding Source: National Science Foundation

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CuInSe2 (CISe) quantum dots (QDs) were synthesized with tunable size from less than 2 to 7 nm diameter. Nanocrystals were made using a secondary phosphine selenide as the Se source, which, compared to tertiary phosphine selenide precursors, was found to provide higher product yields and smaller nanocrystals that elicit quantum confinement with a size-dependent optical gap. Photovoltaic devices fabricated from spray-cast CISe QD films exhibited large, size-dependent, open-circuit voltages, up to 849 mV for absorber films with a 1.46 eV optical gap, suggesting that midgap trapping does not dominate the performance of these CISe QD solar cells.

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