期刊
PHYSICAL REVIEW LETTERS
卷 114, 期 24, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.114.246401
关键词
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资金
- Austrian Science Fund through the SFB ViCoM
- DFG [FOR 1346]
- European Research Council under the European Union's Seventh Framework Program (FP)/ERC [306447]
- Austrian Science Fund (FWF) [I 1395] Funding Source: researchfish
- Austrian Science Fund (FWF) [I1395] Funding Source: Austrian Science Fund (FWF)
We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO3 on a SrTiO3 substrate are insulating: the thin film geometry lifts the orbital degeneracy, which in turn triggers a first-order Mott-Hubbard transition. Two layers of SrVO3 are just at the verge of a Mott-Hubbard transition and hence ideally suited for technological applications of the Mott-Hubbard transition: the heterostructure is highly sensitive to strain, electric field, and temperature. A gate voltage can also switch between metal (ON) and insulator (OFF), so that a transistor with ideal ON-OFF switching properties is realized.
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