期刊
PHYSICAL REVIEW LETTERS
卷 114, 期 16, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.114.166401
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资金
- NSF [DMR-0905843, DMR-1307075]
- National High Magnetic Field Laboratory through NSF Cooperative Agreement [DMR-1157490]
- State of Florida
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1307075] Funding Source: National Science Foundation
A study of the temperature (T) and density (n(s)) dependence of conductivity sigma(n(s), T) of a highly disordered, two- dimensional (2D) electron system in Si demonstrates scaling behavior consistent with the existence of a metal-insulator transition (MIT). The same critical exponents are found when the Coulomb interaction is screened by the metallic gate and when it is unscreened or long range. The results strongly suggest the existence of a disorder-dominated 2D MIT, which is not directly affected by the range of the Coulomb interactions.
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