期刊
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 2, 期 8, 页码 841-845出版社
AMER CHEMICAL SOC
DOI: 10.1021/jz200265w
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资金
- Information Display RD Center [F0004021-2010-33]
- NRF [2010-0020414]
- Ministry of Education, Science and Technology [2010K001066, 2009-0089030]
- National Research Foundation of Korea [2011-56529, 2010-0020414, 2009-0089030, 2010-50171] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We have devised a method to optimize the performance of organic field-effect transistors (OFETs) by controlling the work functions of graphene electrodes by functionalizing the surface of SiO(2) substrates with self-assembled monolayers (SAMs). The electron-donating NH(2)-terminated SAMs induce strong n-doping in graphene, whereas the CH(3)-terminated SAMs neutralize the p-doping induced by SiO(2) substrates, resulting in considerable changes in the work functions of graphene electrodes. This approach was successfully utilized to optimize electrical properties of graphene field-effect transistors and organic electronic devices using graphene electrodes. Considering the patternability and robustness of SAMs, this method would find numerous applications in graphene-based organic electronics and optoelectronic devices such as organic light-emitting diodes and organic photovoltaic devices.
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