期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 118, 期 12, 页码 6365-6371出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp411128m
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资金
- National Natural Science Foundation of China [61205038, 11274135]
- Natural Science Foundation of Jilin province [201115013]
- Ph.D. Programs Foundation of Ministry of Education of China [20120061120011]
- Scientific and Technological Research Project of the 12th Five-Year Plan of Jilin Provincial Education Department [2013189]
- High Performance Computing Center of Jilin University, China
We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified forbidden bandgap. With increasing indium concentration in SnO2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks forbidden band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides.
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