期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 118, 期 1, 页码 408-415出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp409738f
关键词
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资金
- World Class University (WCU) program [R31-2008-000-10075-0]
- MEST-US AFOSR Cooperation Program through the National Research Foundation of Korea (NRF)
- Korean Ministry of Education, Science and Technology [K21002001972-11B1200-08710]
- Asian Office of Aerospace Research & Development (AOARD)
- Army Research Laboratory (ARL)
- National Science Foundation (NSF)
- Defense Advanced Research Projects Agency (DARPA)
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1324776] Funding Source: National Science Foundation
Ultrasmooth and highly conductive amorphous In-Zn-O (a-IZO) films are grown by atomic layer deposition (ALD). This opens a new pathway to highly transparent and conductive oxides with an extreme conformality. In this process, a-IZO films of various compositions are deposited by alternate stacking of ZnO and In2O3 atomic-layers at a temperature of 200 degrees C. The IZO films have an amorphous phase over a wide composition range, 43.2-91.5 at %, of In cation ratio. The In-rich a-IZO film (83.2 at % In) exhibits a very low resistivity of 3.9 x 10(-4) Omega cm and extremely high electron mobility in excess of 50 cm(2) V-1 s(-1), one of the highest among the reported ALD-grown transparent conducting oxides. Moreover, it exhibits an ultrasmooth surface (similar to 0.2 nm in root-mean-square roughness), and can be conformally coated onto nanotrench structures (inlet size: 25 nm) with excellent step coverage of 96%.
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