期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 117, 期 40, 页码 20557-20561出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp403455a
关键词
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资金
- European Research Council [239865]
- Flemish Research Foundation FWO [G.0209.11]
- Special Research Fund BOF of Ghent University
- Flemish Government
- European Community's Trans National Access Program CALIPSO
Thermal atomic layer deposition (ALD) of platinum is usually achieved using molecular oxygen as the reactant gas and deposition temperatures in the 250-300 degrees C range. In this work, crystalline thin films of metallic Pt have been grown by ALD at temperatures as low as 100 degrees C using (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) as the Pt precursor and ozone as the reactant gas. The novel process is characterized by a constant growth rate of 0.45 angstrom per cycle within the 100-300 degrees C temperature window. The Pt films are uniform with low impurity levels and close-to-bulk resistivities even at the lowest deposition temperature. We show that the initial growth on SiO2 surfaces is nucleation-controlled and islandlike and demonstrate the good conformality of the low-temperature ALD process by Pt deposition on anodic alumina nanopores and mesoporous silica thin films.
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