Nitrogen Vacancy-Promoted Photocatalytic Activity of Graphitic Carbon Nitride

Vacancy defects can play an important role in modifying the electronic structure and the properties of photoexcited charge carriers and consequently the photocatalytic activity of semiconductor photocatalysts. By controlling the polycondensation temperature of a dicyandiamide precursor in the preparation of graphitic carbon nitride (g-C3N4), we introduced nitrogen vacancies in the framework of g-C3N4. These vacancies exert remarkable effects on modifying the electronic structure of g-C3N4 as shown in UV-visible absorption spectra and valence band spectra. Steady and time-resolved fluorescence emission spectra show that, due to the existence of abundant nitrogen vacancies, the intrinsic radiative recombination of electrons and holes in g-C3N4 is greatly restrained, and the population of short-lived and long-lived charge carriers is decreased and increased, respectively. As a consequence, the overall photocatalytic activity of the g-C3N4, characterized by the ability to generate center dot OH radicals, photodecomposition of Rhodamine B, and photocatalytic hydrogen evolution under both UV-visible and visible light, was remarkably improved.