期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 116, 期 23, 页码 12940-12945出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp3028935
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资金
- National Natural Science Foundation of China [51102278, 50902124]
- New Century Excellent Talents Supported Program [NCET-11-0868]
- Start-Up Grant of the Nanyang Technological University, Singapore [SUG 10/10]
Tapered silicon carbide (SiC) nanowires were directly grown on the surface of flexible carbon fabric by a chemical vapor deposition process. The products were systemically characterized by X-ray diffraction, field emission scanning electron microscopy, high-resolution transmission electron microscopy, selected area electronic diffraction, and energy-dispersive X-ray spectroscopy. The results revealed that the tapered nanowires were of single crystalline beta-SiC phase with the growth direction along [111] and had a feature of zigzag faceting over the wire surfaces. Such faceting was created by a quasi-periodic placement of twinning boundaries along the wire axis, which can be explained by surface energy minimization during the growth process. Based on the characterizations and thermodynamics analysis, the Fe-assisted vapor liquid solid (VLS) growth mechanism of tapered SiC nanowires was discussed. Furthermore, field emission measurements showed a very low turn-on field at 1.2 V mu m(-1) and a high field-enhancement factor of 3368. This study shows that SiC nanowires on carbon fabric have potential applications in electronic devices and flat panel displays.
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