期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 116, 期 36, 页码 19095-19103出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp3045737
关键词
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资金
- National Science foundation [CHE-0822697, CHE-0848833, STC-MDITR DMR 0120967, CMMI-0927736]
- Direct For Mathematical & Physical Scien
- Division Of Chemistry [0848833] Funding Source: National Science Foundation
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [820382] Funding Source: National Science Foundation
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [1251639] Funding Source: National Science Foundation
Monolithic and patterned aminopropyltriethoxysilane (APTES) layers are used to create n-doped graphene, graphene p-n junctions, and FET devices containing p-n junctions in the device channel through transfer of CVD graphene onto APTES coated substrates. APTES doping is shown to not result in introduction of defects. I-V measurements of FET devices containing patterned APTES layers show it is possible to control the position of the two current minima (two Dirac points) in the ambipolar p-n junction.
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