4.6 Article

Quantum Size Effects on the Chemical Sensing Performance of Two-Dimensional Semiconductors

期刊

JOURNAL OF PHYSICAL CHEMISTRY C
卷 116, 期 17, 页码 9750-9754

出版社

AMER CHEMICAL SOC
DOI: 10.1021/jp300446z

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资金

  1. FCRP/MSD
  2. Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the U.S. Department of Energy [DE-AC02-05CH11231]
  3. Sloan Research Fellowship
  4. NSF
  5. Sunchon National University
  6. National Science Council, Taiwan [NSC 98-2112-M-007-025-MY3]

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We investigate the role of quantum confinement on the performance of gas sensors based on two-dimensional In As membranes. Pd-decorated In As membranes configured as H-2 sensors are shown to exhibit strong thickness dependence, with similar to 100X enhancement in the sensor response as the thickness is reduced from 48 to 8 nm. Through detailed experiments and modeling, the thickness scaling trend is attributed to the quantization of electrons which favorably alters both the position and the transport properties of charge carriers; thus making them more susceptible to surface phenomena.

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