期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 116, 期 25, 页码 13767-13773出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp212427g
关键词
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资金
- Materials Research Department at Ruhr-Universitat Bochum
- Humboldt-Universitat zu Berlin
- Junge Kolleg from the Academy of Science and Arts of North-Rhine Westfalia
- [DFG-SPP 1386]
We report the morphology evolution of porous silicon nanostructures and thermoelectric characterization of silicon nanowires (SiNWs) of Electro-Less Etched (ELE) black silicon. Along the axial direction of NWs, the nanopore density (porosity) increases gradually for both highly doped n-Si (n(+)-Si) and highly doped p-Si (p(+)-Si). The porosity of silicon nanostructures has been demonstrated to be determined mostly by the wafer doping level and etching time. The formation of porous n(+)-SiNWs and porous n(++)-Si film can be understood by an enhanced electron tunnelling from the silicon to the electrolyte through a narrowed space charge layer, while the porous p(+)-SiNW formation could be the result of an increased thermionic emission current over a lower barrier due to a lower band bending. With microfabricated heaters and thermometers, we measured simultaneously electrical resistivity and thermoelectric power (TEP) of boron-doped SiNWs prepared from a Si wafer with resistivity of 0.2-0.4 Omega cm. The electrical conductivity of NWs indicates an increased role of conducting surface states in the ELE SiNWs with a negligible role of surface scattering. The TEP values of NWs at room temperature are around 1.2 +/- 0.1 mV/K, which is comparable to the values of bulk silicon for a similar range of dopant concentration.
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