期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 115, 期 20, 页码 10000-10005出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp202128f
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资金
- New Energy and Industrial Technology Development Organization (NEDO)
- MEXT, Japan
Chemical doping of graphene with foreign atoms is one of the most promising ways to modify the electronic structure of graphene. We fabricated nitrogen (N)-doped graphene on a Pt(111) surface through a chemical vapor deposition method; the heated substrate was exposed to such N-containing organic molecules as pyridine and acrylonitrile. Analysis by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy revealed that N-doped graphene was formed on a Pt(111) surface from pyridine at the substrate temperature (T-S) higher than 500 degrees C, while nitrogen was not doped at T-S higher than 700 degrees C. Exposing the heated substrate to acrylonitrile also led to formation of graphene but nitrogen was not incorporated at any T-S. On the basis of the experimental results, we discuss the growth mechanisms of N-doped graphene at low and high T-S.
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