4.6 Article

Band Gap Tuning of Hydrogenated Graphene: H Coverage and Configuration Dependence

期刊

JOURNAL OF PHYSICAL CHEMISTRY C
卷 115, 期 8, 页码 3236-3242

出版社

AMER CHEMICAL SOC
DOI: 10.1021/jp1094454

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资金

  1. Ph. D. Programs Foundation of Education Ministry of China [20070141026]
  2. Natural Science Foundation of China [40874039]
  3. Fundamental Research Funds for the Central Universities of China [DUT10ZD211]

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The electronic states of partially hydrogenated graphene (HG) structures are studied by the density functional theory calculations. Several types of HG configurations, including randomly removing of H pair, randomly removing individual H atoms, and ordered H pairs removal, are investigated. We find that the configurations with randomly removing H pairs are most energetically favorable. More interestingly, the band gap for such configurations decrease with H concentration and approaches zero around 67% H coverage. The ability to continuously tune the band gap of hydrogenated graphene from 0 to 4.66 eV by different H coverage provides a new pathway for engineering the electronic structure of graphene materials and enhances their applications in electronics and photonics.

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