期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 115, 期 30, 页码 14678-14681出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp205020r
关键词
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资金
- Singapore NRF [NRF-RF2010-07, MOE2009-T2-1-037]
- MER-LION Franco-Singaporean program (STAR-MAEE)
- Direction Generale de l'Armement (DGA) [2009.34.0011.00000000]
Graphene oxide (GO) is a promising candidate for many applications ranging from electronics to sensors. The properties of graphene-based materials not only are dependent on the quality of the sheets but are largely influenced by the way they are assembled. Many techniques have traditionally been used to form GO films, but each of them presents some drawbacks. Herein, we report the use of the original bubble deposition method (BDM) as a simple and powerful method to precisely order and deposit GO films on arbitrary substrates. The intrinsic drainage parameter can be simply adjusted to deposit monolayer films from quasi-isolated flakes to high surface coverage. The flexibility of this method allows the formation of thickness-controlled GO films with negligible interlayer spacing, as well as hybrid materials made of GO sheets and carbon nanotubes.
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