4.6 Article

Insertion/Ejection of Dopant Ions in Composition Tunable Semiconductor Nanocrystals

期刊

JOURNAL OF PHYSICAL CHEMISTRY C
卷 115, 期 40, 页码 19513-19519

出版社

AMER CHEMICAL SOC
DOI: 10.1021/jp2052147

关键词

-

资金

  1. CSIR
  2. DST of India
  3. CSIR, India
  4. LNL Bhilwara

向作者/读者索取更多资源

A new doping strategy to incorporate transition metal dopant ions in semiconductor hosts has been reported here where dopant ions are incorporated in the host lattice following a feasible cation exchange process. Composition variable CdxZn1-xSe alloy nanocrystals have been chosen as an appropriate host which is formed by the cation exchange reaction of Cd with Zn ions in ZnSe nanocrystals. Concomitant insertion and ejection of dopant Cu ions are studied. It has been observed that the composition of Zn and Cd in the nanocrystals decides how much dopant Cu ions will be retained in the host lattice. The entire doping process with evolution, wide range tuning, and quenching of dopant emission as a consequence of inclusion/exclusion of dopant ions is in situ measured during the alloying process. From the retained and expelled dopant amounts, their compatibility in the host lattice is correlated.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据