期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 115, 期 36, 页码 17870-17879出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp204492r
关键词
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资金
- Samsung SAIT GRO
- Division of Chemical Sciences, Geosciences, and Biosciences Office of Basic Energy Sciences of the U.S. Department of Energy-SISGR [DE-FG02-09ER16119]
- Robert A. Welch Foundation [GSW F-1535, AJB F-0021]
Metal doping of the metal oxide photoelectrocatalyst, BiVO4, dramatically increases its activity for water oxidation. Scanning electrochemical microscopy (SECM) was used to screen various dopants for their photoelectrochemical performance and to optimize the used dopant material concentrations with this photocatalyst. For example, adding Mo to W-doped BiVO4 enhanced the performance. The photocatalytic activity was examined on larger electrodes by means of photoelectrochemical and electrochemical measurements. The developed photoelectrocatalyst, W- and Mo-doped BiVO4, shows a photo current for water oxidation that is more than 10 times higher than undoped BiVO4. Factors that affect performance are discussed, and enhanced separation of excited electron-hole pairs by doping onto the semiconductor is suggested by first-principles density-functional theory (DFT) calculations. Distortion of the crystal structure of monoclinic scheelite-like BiVO4 by addition of W and Mo doping predicted by DFT is also revealed by X-ray diffraction and Rietveld refinement analysis. The results indicate that the consecutive doping of W and Mo into the metal oxide photocatalyst introduces improved electron-hole separation without a significant change of the band gap or the material's optical properties.
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