期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 115, 期 11, 页码 4491-4494出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp110650d
关键词
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资金
- Ministry of Education, Science and Technology (MEST) [2009-0052981, 2010-0000053, 2010K001069, 2010-0020207, KRF-2008-313-C00217, KRF-313-2007-2-C00231, 2010-0024426]
- National Research Foundation of Korea [2010-0024426, 2010-50173, 2007-0052981, 2010-0020207] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report the fabrication of nanocrystalline graphite films on sapphire substrates of various cutting directions by using solid carbon source molecular beam epitaxy. Raman spectra show a systematic change from amorphous carbon to nanocrystalline graphite with a cluster diameter of several nanometers, depending on the growth temperature. The symmetry of the substrate seems to have little effect on the film quality. Simulations suggest that the strong bonding between carbon and oxygen may lead to orientational disorders. Transport measurements show a Dirac-like peak and a carrier type change by the gate voltage.
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