4.6 Article

s-d Electronic Interaction Induced H2 Dissociation on the γ-U(100) Surface and Influences of Niobium Doping

期刊

JOURNAL OF PHYSICAL CHEMISTRY C
卷 115, 期 47, 页码 23381-23386

出版社

AMER CHEMICAL SOC
DOI: 10.1021/jp206750q

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资金

  1. NSFC [10904004, 90921003]
  2. Foundations for Development of Science and Technology of China Academy of Engineering Physics [2011B0301060, 2011A0301016, 2008A0301013]

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The dissociation of hydrogen molecules on the gamma-U(100) surface is systematically studied with the density functional theory method. Through potential energy surface calculations, we find that hydrogen molecules can dissociate without any barriers on the clean gamma-U(100) surface. After careful electronic analysis, it is found that charge transfer between the hydrogen s and uranium d electronic states causes the dissociation, which is quite different from the dissociation of hydrogen molecules on other actinide metal surfaces. Considering that doping of 3d transition metal atoms can stabilize the gamma phase of U, we also study the influences of Nb doping on the hydrogen dissociation process. We find that the 3d electronic states of Nb also take part in the hybridization with hydrogen s electronic states, which leads to the result that hydrogen molecules also dissociate without any energy barriers on the doped U surface. In addition, the free electronic energy lowers more quickly for a hydrogen molecule approaching the doped U surface.

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