期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 114, 期 3, 页码 1689-1693出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp910515b
关键词
-
资金
- National Research Foundation of Korea
- Ministry of Education, Science and Technology [R32-20031]
- IT RAMP
- D program of MKE/IITA [2008-F-023-01]
- Korea Evaluation Institute of Industrial Technology (KEIT) [KI001882] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [R32-2008-000-20031-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Vertically aligned ZnO nanowires were grown on c-plane sapphire substrate by metal organic chemical vapor deposition technique. The nanowires were single crystalline and structurally uniform and did not exhibit any noticeable defects. Pt/ZnO single nanowire Schottky diodes were fabricated by using e-beam lithography and then characterized by measuring temperature-dependent I-V characteristics. The diode exhibited a low Schottky barrier height of 0.42 V and ideality factor of 1.6 at room temperature. Temperature-dependent hydrogen-sensing measurements were carried out with different hydrogen concentrations. A good sensing characteristic (S approximate to 90%) has been observed at room temperature with a response time of similar to 55 s.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据