期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 114, 期 47, 页码 20100-20106出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp1070083
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资金
- National Science Council of Taiwan [NSC98-2221-E-006-110-MY3, 98-2622-E-006-012-CC2, 98-3114-E-007-011, 98-3114-E-007-005, 98-2221-E-006-112-MY2]
- Bureau of Energy, Ministry of Economic Affairs, Taiwan [98-D0204-2]
We report the synthesis of wurtzite-like gallium oxynitride (GaON) photocatalysts by nitridation of Ga(OH)(3) with NH3 at temperatures between 550 and 900 degrees C. Ga(OH)(3) is a more suitable precursor for GaON synthesis than Ga2O3, because its crystal lattice contains unoccupied 12-coordinate sites that facilitate ionic transportation during nitridation. The prepared GaON catalysts had band gap energies from 2.2 to 2.8 eV and showed significant activities in the visible-light promoted evolution of H-2 and O-2 gases from methanol and AgNO3 solutions, respectively. The maximum H-2 and O-2 evolution rates occurred for catalysts synthesized at 625 and 700 degrees C, respectively. These active catalysts had an N/O atomic ratio close to unity, suggesting that extensive hybridization of N-2p and O-2p orbitals promotes charge mobility, and thus enhances photocatalytic activity. This study highlights the interesting possibility of synthesizing a large diversity of visible-light active, III-oxynitride catalysts using this Ga(OH)(3) route.
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