期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 114, 期 28, 页码 12325-12334出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp102345d
关键词
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资金
- Consejeria de Innovacion, Ciencia y Empresa, Junta de Andalucia [PAI-FQM 337, FQM-P06-01864]
The geometries and electronic properties of a series of bis(phenylethynyl)thienoacenes as precursors of n-type materials with desirable (opto)electronic properties have been studied from a theoretical perspective: 2,5-bis-phenylethynyl-thiophene (PhEtT), 2,5-bis-phenylethynyl-thieno[3,2-b]thiophene (PhEtT2), 2,6-bis-phenylethynyl-dithieno[3,2-b;2',3'-d]thiophene (PhEtT3), and 2,6-bis-phenylethyny1-3,4,7,8-tetrathia-dicyclopenta[a,e]pentalene (PhEtT4). This has allowed performance of a comparative study of the influence of the number of fused thiophene rings on the studied properties. The (opto)electronic properties and conducting capability were investigated through the HOMO -> LUMO excitation energy, bond length alternation (BLA), LUMO energy, electron affinity, and intramolecular reorganization energy. Also, the influence of planarity on electrical conductivity has been analyzed by means of the natural bond orbital (NBO) approach together with the theory of atoms in molecules (AIM). From this study it follows that the increase in the number of fused thiophene rings does not significantly affect those properties related to aromaticity such as BLA, rotational barriers, or charge transference between the different aromatic rings, while that increase leads to an easier charge injection and brings on an enhancement of the n-type character.
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