Fine Structure of Ultraviolet Photoluminescence of Tin Oxide Nanowires

Photoluminescence (PL) properties of tin oxide (SnO2) nanowires tire studied in detail using high spectral resolution spectroscopy in a temperature range of 10-300 K. The nanowires have an average diameter of 86 nm. The high quality of the nanowires enables the observation of rich fine structures in the ultraviolet PL spectra at low temperatures. By carefully analyzing the temperature and excitation power dependent spectra, the following emissions are identified: recombination of donor-acceptor pairs, excitons bound to neutral and ionized donor impurities and optical transitions from free electrons to neutral acceptor impurities. Moreover, it is believed that the emission from recombination of free excitons is observed, which is unusual for SnO2, a dipole forbidden direct band gap semiconductor.