Ultra low-Voltage Electric Double-Layer SnO2 Nanowire Transistors Gated by Microporous SiO2-Based Solid Electrolyte

Ultralow-voltage individual Sb-doped SnO2 nanowire field-effect transistors (FETs) gated by microporous SiO2-based solid electrolyte are fabricated by using nickel grid as a shadow mask. The operation voltage of the nanowire device is found to be as low as 1.0 V due to the large electric double-layer capacitance of the microporous SiO2 gate dielectric deposited at room temperature. The field-effect electron mobility, current on/off ratio, and subthreshold slope of the transistors are estimated to be 101 cm(2)/(Vs), 105, and 85 mV/decade, respectively. Such low-voltage nanowire FETs gated by microporous SiO2-based solid electrolyte are promising for portable nanoscale sensor applications.