期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 114, 期 28, 页码 12316-12319出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp1018789
关键词
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资金
- National Natural Science Foundation of China [10874042, 60801037]
- National Excellent Doctoral Dissertation of PR China [200752]
- Natural Science Foundation of Zhejiang province, China [0804201051]
Ultralow-voltage individual Sb-doped SnO2 nanowire field-effect transistors (FETs) gated by microporous SiO2-based solid electrolyte are fabricated by using nickel grid as a shadow mask. The operation voltage of the nanowire device is found to be as low as 1.0 V due to the large electric double-layer capacitance of the microporous SiO2 gate dielectric deposited at room temperature. The field-effect electron mobility, current on/off ratio, and subthreshold slope of the transistors are estimated to be 101 cm(2)/(Vs), 105, and 85 mV/decade, respectively. Such low-voltage nanowire FETs gated by microporous SiO2-based solid electrolyte are promising for portable nanoscale sensor applications.
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