期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 114, 期 29, 页码 12422-12426出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp101392g
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资金
- National Science Council of the Republic of China, Taiwan [NSC 98-2221-E-024-001]
This study evaluated a process for fabricating white light emitting diodes (LEDs) by doping Ga into ZnO nanowires (ZnO:Ga NWs) on p-GaN substrates. Vertically aligned ZnO:Ga NWs were grown by thermal chemical vapor deposition to 0.7,mu m in length and 50-300 nm in diameter. The white light LED was successfully fabricated by forming an n-p-n heterojunction on an ITO/glass substrate. The electroluminescence (EL) emission peak was 500 nm, and the broad band fwhm intensity was 200 nm. Finally, photographs show a white light from the ZnO:Ga LED.
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