期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 114, 期 50, 页码 22165-22170出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp1067928
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资金
- MIUR [2008N7CYL5, 20085M27SS]
- University of Bologna
- Fondazione Carisbo
A chemical route to locally etch the native silica film on silicon, using the SECM, thus creating patterns of reactive Si-H holes, is described. The procedure is based on the alteration of the pH in the volume between the SECM tip and the pristine p-Si substrate so as to turn locally the initially inert fluoride solution into a strong etchant capable to bear holes through the SiO(2) native layer in a very controlled and highly reproducible way. The direct electrochemical grafting of p-NO(2)-benzene diazonium cation into the etched Si-H holes and the subsequent functionalization of the electrografted organic layer by either a fluorescent probe or a redox probe (HRP) were then used to highlight the versatility of this approach for the fabrication of micropatterned functional surfaces.
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