期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 113, 期 20, 页码 8945-8947出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp901025a
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资金
- Hong Kong SAR [400207, 414908]
- CUHK Focused Investment Scheme C
Large area Ga-doped ZnO nanowire arrays have been vertically grown on transparent conducting substrate by a simple chemical vapor deposition method. Experimental results reveal the well-aligned array morphology and the uniform Ga concentration in these nanowires with individual nanowires of single crystallinity. In particular, direct I-V measurements performed on a single nanowire on indium-tin oxide (ITO) substrate disclose both the low resistivity of nanowire and its Ohmic contact with the conducting substrate, which characteristics make them promising candidates for various optoelectronic and energy applications including photovoltaic cells.
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