4.6 Article

High-Performance Molecular Memory Device Using Ag-TCNQ Crystals Grown by Solution Process

期刊

JOURNAL OF PHYSICAL CHEMISTRY C
卷 114, 期 1, 页码 567-571

出版社

AMER CHEMICAL SOC
DOI: 10.1021/jp907342r

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资金

  1. National Research Foundation (NRF)
  2. Korea government [R01-2007-000-20508-0]
  3. NRF [R11-2008-052-03003]
  4. Konkuk University, Korea
  5. National Research Foundation of Korea [R01-2007-000-20508-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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The one-dimensional nano/microstructures of metal-organic complex (Ag-TCNQ) were synthesized by solution route via the reaction between Ag film and TCNQ. We have grown micrometer-sized Ag-TCNQ crystals by simply spin-coating the TCNQ solution over Ag substrate and treating at elevated temperature. The reproducible memory behavior with on/off ratio similar to 500 has been observed in devices based on Ag-TCNQ nano/microcrystals. The on/off ratio of the devices has been increased by more than 2 orders of magnitude by incorporating a layer of polymer on top of the TCNQ film. The mass production of large size crystals via this method holds great promise for applications in high-density information storage.

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