期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 113, 期 33, 页码 14633-14637出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp903079c
关键词
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资金
- Natural Science Foundation of China [10574122, 50772110, 50721091]
- National Basic Research Program of China [2006CB922000, 2009CB939901, 2007CB925202]
- CAS [KJCX2.YW.W06-3]
Zn-doped gallium nitride (GaN) nanotubes with zigzag morphology have been synthesized by a chemical vapor deposition method. A single-crystalline zigzag nanotube consists of two building blocks with equivalent growth directions, hexagonal cross sections, and about 10 nm wall thicknesses. The formation of the nanotube is attributed to the reduction of electrostatic interaction energy caused by the polar side surfaces of GaN. A room temperature photoluminescence spectrum of Zn-doped GaN nanotubes with zigzag morphology shows two peaks at 2.97 and 2,16 eV, respectively.
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