期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 112, 期 30, 页码 11539-11544出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp802880c
关键词
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Field-effect transistors based on a single SnO2 nanowire were successfully fabricated, and their photon- and gas-sensing properties were investigated. It is found that the sensitivity of single SnO2 nanowire based devices was remarkably improved by surface functionalization with ZnO or NiO nanoparticles. The heterojunction between the surface coating layers and SnO2 and the corresponding coupling effect of the two sensing materials play a critical role in controlling device sensitivity.
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