期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 112, 期 40, 页码 15791-15795出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp803872s
关键词
-
资金
- ASM Microchemistry
- Academy of Finland [Project 115601]
Selective-area atomic layer deposition (ALD) was achieved using poly(methyl methacrylate) (PMMA) films as growth inhibiting mask layers. The PMMA films were prepared from PMMA-toluene solution by spin-coating and patterned by UV lithography through a mechanical mask. The patterned PMMA films were tested in several ALD processes, both noble metals and oxides. The tested noble metal processes were iridium, platinum, and ruthenium, and the oxide processes were Al2O3 and TiO2. Al2O3 was deposited using AlCl3 and H,O and trimethylaluminum (TMA) and H2O. TiO2 was deposited using Ti(OMe)(4) and H2O. The growth temperatures were 250-350 degrees C.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据