期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 112, 期 39, 页码 15129-15133出版社
AMER CHEMICAL SOC
DOI: 10.1021/jp8038785
关键词
-
资金
- NSF of China [60771005, 60728102]
On the basis of the metal-catalyzed chemical vapor deposition method, a general route was developed to synthesize single crystal silicon nanobelts using Au, Cu, and Zn as catalysts, avoiding any template and additive. The nanobelts were characterized using electron microscopy. The silicon nanobelts, which have great length, smooth edges, flat surfaces, and tiny thicknesses, grow along the < 112 > direction with the top surface of the {111} facet. Evidence shows that the growth of the silicon nanobelt may follow the vapor-liquid-solid process. Furthermore, the growth conditions of the nanobelts were preliminarily investigated. These studies not only provide novel materials for nanodevices but also offer helpful instructions for the metal-catalyzed synthesis of other semiconductor nanobelts.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据