4.6 Article

Heats of Formation and Bond Dissociation Energies of the Halosilanes, Methylhalosilanes, and Halomethylsilanes

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JOURNAL OF PHYSICAL CHEMISTRY A
卷 113, 期 15, 页码 3656-3661

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AMER CHEMICAL SOC
DOI: 10.1021/jp811386v

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  1. Department of Energy, Office of Energy Efficiency and Renewable Energy [DE-PS36-03GO93013]

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Atomization energies at 0 K and heats of formation at 0 and 298 K are predicted for SiH3X, SiH2XCH3, and SiH3CH2X with X = F, Cl, Br, and I from coupled cluster theory (CCSD(T)) calculations with effective core potential correlation-consistent basis sets for Br and I. To achieve near chemical accuracy (+/-1 kcal/mol), three corrections were added to the complete basis set binding energies based on frozen core coupled cluster theory energies: a correction for core-valence effects, a correction for scalar relativistic effects, and a correction for first order atomic spin-orbit effects. Vibrational zero point energies were computed at the CCSD(T) level of theory and the C-H and Si-H stretches scaled to experiment. The C-H, Si-H, Si-C, C-X, and Si-X (X = F, Cl, Br, and 1) bond dissociation energies (BDEs) in the halosilanes, halomethysilanes, and methylhalosilanes were predicted. Except for methyliodosilane, methyl substitution leads to an increase in Si-X BDE when compared to the Si-X BDE in the halosilanes. Except for methyliodosilane, halide substitution leads to an increase in the Si-C BDE in comparison to the Si-C BDE in methylsilane of 86.9 kcal/mol at 0 K. Unlike the methylhalosilanes, the halomethylsilanes all show a decrease in the Si-C BDE when compared to the Si-C BDE in methylsilane. The trends correlate with the electronegativity of the substituent.

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