Roll-to-Roll UV Imprint for Bottom-up Transistor Fabrication

We propose a design to fabricate transistors on flexible substrates in a bottom-up fashion using R2R UV-imprint lithography. The design consists of a template composed of multilevel as well as gray level features, the later used to facilitate device interconnection. A hard mold is fabricated by LBR and a flexible Ni replica is done using Ni electroplating. The flexible stamp is used in the R2R UV imprint machine with PET as flexible substrate. Imprints were performed at a speed of 0.35m/min and show a high level of replication of the multilevel as well as gray level features.