4.0 Article

New polymer design by DLS analysis of development defect detection

期刊

出版社

TECHNICAL ASSOC PHOTOPOLYMERS,JAPAN
DOI: 10.2494/photopolymer.21.641

关键词

ArF resist; development defect; dynamic light scattering (DLS); cluster

向作者/读者索取更多资源

The behavior of developed ArF deprotected polymer to TMAH developer was demonstrated in this study to understand the effect of deprotected polymer's solubility and dispersion on development defect generation. The aggregation of deprotected polymer was observed with the dynamic light scattering (DLS) measurements. The observed aggregates were classified cluster-1 and cluster-2 based on the size, of which hydrodynamic radii (RH) were c.a. 100nm and more than 500nm, respectively. In addition, the size and existing ratio of the aggregates were amplified by being exposed PAG and diluted in the developer. Furthermore, structure of protecting group and monomer composition showed large impact on the size of the cluster. It was found that DLS analysis could explain a main root cause of development defect generation, which possibly is the cluster formation. According to this study, ArF polymer design was suggested with development defect free as new concept for future ArF resist technology.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.0
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据