4.6 Article

Near-field thermal radiation between doped silicon plates at nanoscale gaps

期刊

PHYSICAL REVIEW B
卷 91, 期 19, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.91.195136

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资金

  1. Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [NRF-2012R1A1A1006186, NRF-2013R1A1A2019816]
  2. civil military technology co-operation program [14-BR-SS-12]
  3. KAIST End Run Project program [N01150142]
  4. National Research Foundation of Korea [2012R1A1A1006186, 2013R1A1A2019816] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Radiative heat transfer can be significantly enhanced via photon tunneling through a nanometer-scale gap to the point that it exceeds the blackbody limit. Here we report quantitative measurements of the near-field thermal radiation between doped-Si plates (width = 480 mu m and length = 1.34 cm). A novel MEMS-based platform enables us to maintain doped-Si plates at nanoscale gap distances that cannot be achieved by other methods. The measured radiative heat transfer coefficient was found to be 2.91 times greater than the blackbody limit at a 400-nm vacuum gap.

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