期刊
PHYSICAL REVIEW B
卷 92, 期 24, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.92.241302
关键词
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资金
- Technological agency of the Czech Republic [TH01010419]
- European Regional Development Fund [CZ.1.05/1.1.00/02.0068]
- European Social Fund (Belgium) [CZ.1.07/2.3.00/30.0005]
We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the (k) over right arrow . (p) over right arrow framework is given. This is verified experimentally by polarization resolved photoluminescence measurements on samples with the type-II confinement. We show that the polarization anisotropy might be utilized to find the vertical position of the hole wave function and its orientation with respect to crystallographic axes of the sample. A proposition for usage in the information technology as a room temperature photonic gate operating at the communication wavelengths as well as a simple model to estimate the energy of fine-structure splitting for type-II GaAsSb capped InAs QDs are given.
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