期刊
PHYSICAL REVIEW B
卷 91, 期 16, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.91.161304
关键词
-
资金
- Physical Sciences Division (EW) of NWO
Making a metal contact to the two-dimensional semiconductor MoS2 without creating a Schottky barrier is a challenge. Using density functional calculations we show that, although the Schottky barrier for electrons obeys the Schottky-Mott rule for high work function (greater than or similar to 4.7 eV) metals, the Fermi level is pinned at 0.1-0.3 eV below the conduction band edge of MoS2 for low work function metals, due to the metal-MoS2 interaction. Inserting a boron nitride (BN) monolayer between the metal and the MoS2 disrupts this interaction, and restores the MoS2 electronic structure. Moreover, a BN layer decreases the metal work function of Co and Ni by similar to 2 eV, and enables a lineup of the Fermi level with the MoS2 conduction band. Surface modification by adsorbing a single BN layer is a practical method to attain vanishing Schottky barrier heights.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据